Electrical memory materials and devices
edited by Wen-Chang Chen

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Cambridge : Royal Society of Chemistry, 2016;
xx, 388 stran : ilustrace (některé barevné) ; 24 cm
Ostatní autoři: Chen, Wen-Chang
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organická elektronika --- paměť (výpočetní technika) technické aspekty --- elektronické součástky --- organické sloučeniny fyzikální aspekty

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                                        Chapter 1	Organic Electronic Memory Devices	1
Bin Zhang, Yu Chen, Koon-Gee Neoh, and En-Tang Kang
1.1	Introduction	1
1.2	Basic Concepts of Electronic Memory	2
1.3	History of Organic/Polymer Electronic Memory
Devices	4
1.4	Classification of Electrical Memory Devices	7
1.4.1	Transistor-Type Electronic Memory	7
1.4.2	Capacitor-Type Electronic Memory	9
1.4.3	Resistor-Type Electronic Memory	11
1.5	Types of Organic-Based Electrical Memory Devices 15
1.5.1	Organic Molecules	15
1.5.2	Polymeric Materials	23
1.5.3	Organic-Inorganic Hybrid Materials	34
1.6	Conclusions and Outlook	42
References	44
Chapter 2	Organic Resistor Memory Devices	54
Tadanori Kurosawa, Tomoya Higashihara, and Mitsuru Veda
2.1	Device Structures of Organic Resistor Memory
Devices	54
2.2	Switching Characteristics of Organic Resistor
Memory Devices	56
2.2.1	DRAM Characteristics	56
2.2.2	SRAM Characteristics	58
2.2.3	FLASH Characteristics	59
2.2.4	WORM Characteristics	59
2.3	Materials	62
2.3.1	Materials Design Principle	62
2.3.2	Organic Molecules	62
2.3.3	Polymerie Materials	66
2.3.4	Organic-Inorganic Hybrid Materials	76
2.4	Mechanism Discussion of Organic Resistor
Memory Devices	78
2.4.1	Filamentary Conduction	78
2.4.2	Space Charge and Traps	82
2.4.3	Charge Transfer Effect	85
2.4.4	The Conformation Effect and Other Effects	87
2.5	Applications of Organic Resistor Memory
Devices	88
2.5.1	Three-Dimensional Devices	90
2.5.2	Increasing Density by Scale Down	91
2.5.3	Flexible Memory Devices	92
2.5.4	Transferrable Memory Devices	93
2.6	Concluding Remarks	94
References	95
Chapter 3 Donor-Acceptor Organic Molecule Resistor Switching
Memory Devices	101
Jianmei Lu, Hua Li, and Qing-FengXu
3.1	Introduction	101
3.2	Organic Molecules as Active Material in
Memory Devices	102
3.2.1	The Common Electron Donor and Acceptor Groups Used in Molecular
Based Memory Devices	102
3.3	Organometallic Complexes as Active Materials in
Memory Devices	110
3.4	Organic Molecules for Multilevel Resistive Memory
Devices	113
3.4.1	Azo Benzene Derivative Based Ternary
Memory Devices	113
3.4.2	Other Functional Molecules with Ternary
Memory	122
3.4.3	Molecules with Ternary Memory Performance Through Photoelectric Effects 122
3.5	Structural Effects on Memory Performance	124
3.5.1	Switching Voltage and ON/OFF Ratio	125
3.5.2	Memory Types	131
3.6	Conclusion	132
References	132
Chapter 4 High Performance Polyimides for Resistive Switching
Memory Devices	136
Hung-Ju Yen,Jia-Hao Wu, and Guey-Sheng Lion
4.1	Introduction to Polyimide-Based Electrical
Memory Devices	136
4.2	Mechanism	137
4.2.1	Charge Transfer	137
4.2.2	Space Charge Traps	140
4.2.3	Filament Conduction	140
4.3	Polyimides for Volatile Memory Devices	140
4.3.1	DRAM Properties	142
4.3.2	SRAM Properties	143
4.4	Polyimides for Non-Volatile Memory Devices	145
4.4.1	WORM Properties	145
4.4.2	Flash Properties	148
4.5	Molecular Design of the Volatility	151
4.5.1	Donor Effect	151
4.5.2	Acceptor Effect	156
4.5.3	Linkage Effect	158
4.5.4	Thickness Effect	160
4.6	Polyimide-Inorganic Hybrid Materials	161
4.7	Flexible Polyimide Electrical Memory Devices	163
References	163
Chapter 5 Nonconjugated Polymers with Electroactive
Chromophore Pendants	167
Moonhor Ree, Yong-Gi ??, Sungjin Song, and Brian J. Ree
5.1	Introduction	167
5.2	Nonconjugated Polymers with Electron-Donating
Chromophore Pendants	168
5.2.1	Polymers with Carbazole Pendants: Backbone
and Molecular Orbital Effects	168
5.2.2	Polymers with Triphenylamine-Based Pendants:
Substituent and Molecular Orbital Effects	174
5.3	Nonconjugated Polymers with Electron-Accepting
Chromophore Pendants	183
5.4	Nonconjugated Polymers with Electron-Donor
and -Acceptor Chromophore Pendants	189
5.5	Stability and Reliability of Electrical Memory
in Polymer-Based Devices	194
5.6	Memory Mechanisms in Polymer-Based Devices	197
5.7	Concluding Remarks	202
References	202
Chapter 6	Polymer Composites for Electrical Memory Device
Applications	206
Cheng-Liang Liu and Wen-Chang Chen
6.1	Introduction	206
6.2	Polymer-Organic Molecule	Composites	207
6.3	Organic Polymer-Inorganic Nanomaterial
Composites	210
6.3.1	Multistacked Composite with Metallic
Nanoparticles Embedded	210
6.3.2	Organic Polymer-Metal Nanoparticle
Hybrids	212
6.3.3	Organic Polymer-Other Inorganic
Nanomaterial Composites	215
6.4	Polymer-Carbon Allotrope Composites	217
6.4.1	Polymer-Buckyball Cluster Composites	217
6.4.2	Polymer-Carbon Nanotube Composites	220
6.4.3	Polymer-Graphene Sheet Composites	222
6.5	Polymer-Ionic Liquid Composites	223
6.6	Conclusion	224
References	224
Chapter 7	Conjugated Polymers for Memory Device Applications 233
Cheng-Liang Liu and Wen-Chang Chen
7.1	Introduction	233
7.2	Fluorene-Based Conjugated Homopolymers
and Copolymers	234
7.3	Thiophene-Based Conjugated Polymers	238
7.4	Carbazole-Containing Conjugated Polymers	240
7.5	Conjugated Poly(azomethine)s	243
7.6	Other Intrinsic Conjugated Polymers	245
7.7	Conjugated Polymers Containing Metal Complexes 246
7.8	Conjugated Polyelectrolytes	251
7.9	Conclusion	253
References	253
Chapter 8	Non-Volatile Memory Properties	of Donor-Acceptor
Block Copolymers	256
Nam-Goo Kang, Myung-Jin Kim, and Jae-Suk Lee
8.1	Introduction	256
8.1.1	Categories of Electronic Memory	257
8.1.2	Brief Description of Organic Memory
Materials and Devices	258
8.1.3	Block Copolymers and Self-Assembled
Nanostructures	260
8.2	Non-Volatile Memory Based on Well-Defined
Polymer Structures	261
8.2.1	Rod-Coil block copolymers	261
8.2.2	Well-Defined Homopolymers	268
8.2.3	Well-Defined Coil-Coil Block
Copolymers	275
8.3	Summary and Outlook	290
References	291
Chapter 9 Organic Transistor Memory Devices and Materials	295
Chiao-Wei Tseng and Yu-Tai Tao
9.1	Basic Concepts of Organic Field-Effect Transistors 295
9.2	Transistor Memory Devices	297
9.3	Organic Transistor Memory Devices	299
9.3.1	Organic Transistor Memory Devices Based
on Ferroelectrics	300
9.3.2	Organic Transistor Memory Devices
Based on Charge Trapping	303
9.4	Organic Transistor Memory Devices Incorporating
Nanoparticles	316
9.4.1	Inserting NPs into the Gate Dielectric	316
9.4.2	Incorporating NPs in the Semiconductor	318
9.4.3	Embedding NPs at the
Semiconductor/Dielectric Interface	321
9.5	Conclusion	322
References	324
Chapter 10	Organic Floating Gate Transistor Memory Devices	330
Hung Chin Wu, Ying-Hsuan Chou, Hsuan-Chun Chang, and Wen-Chang Chen
10.1	Nanoparticle Embedded Materials as Charge
Storage Layers	330
10.1.1	Thermal Evaporation	331
10.1.2	Chemical Assembly	335
10.1.3	Polymer-Nanoparticle Hybrids	340
10.2	Functional Moiety Embedded Materials as
Charge Storage Layers	342
10.3	Switching Mechanism	347
10.4	Flexible Electrical Memory Devices	348
10.5	Conclusion	351
References	351
Chapter 11 Organic Ferroelectric Memory Devices	355
Hsuan-Chun Chang, Hung-Chin Wu, and Wen-Chang Chen
11.1	Introduction	355
11.2	Materials for Ferroelectricity	357
11.3	Principles of Organic Ferroelectric Memory
Operation	361
11.3.1	Organic Ferroelectric Capacitors	361
11.3.2	Organic Ferroelectric Field-Effect Transistors 364
11.3.3	Organic Ferroelectric Diodes	369
11.4	Application and Summary of Organic Ferroelectric
Memory Devices	373
References	374
Chapter 12 Summary and Outlook	377
Wen-Chang Chen
References	380
Subject Index
381
                                    
Detail
Název pole Obsah pole
Údaje o názvu Electrical memory materials and devices /
Vedlejší záhlaví - osobní jméno Chen, Wen-Chang
Vedlej z hlav pro edici - unifikovan n zev RSC polymer chemistry series
Kód předmětové kategorie 621.38 Elektronika
Vedlejší věcné záhlaví - věcné téma organická elektronika
Vedlejší věcné záhlaví - věcné téma paměť (výpočetní technika) technické aspekty
Vedlejší věcné záhlaví - věcné téma elektronické součástky
Vedlejší věcné záhlaví - věcné téma organické sloučeniny fyzikální aspekty
Rejstříkový termín - žánr/forma kolektivní monografie
Nakladatel atd. Cambridge : Royal Society of Chemistry, 2016
Mezinárodní standardní číslo knihy 978-1-78262-116-4 (vázáno)
Fyzický popis xx, 388 stran : ilustrace (některé barevné) ; 24 cm
Poznámka o skryté bibliografii atd. Obsahuje bibliografii a rejstřík
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